A simplified broad-band large-signal nonquasi-static table-based FET model

Author

Fernández-Barciela, Mónica ; Tasker, Paul J. ; Campos-Roca, Yolanda ; Demmler, Markus ; Massler, Hermann ; Sánchez, Enrique ; Currás-Francos, M. Carmen ; Schlechtweg, Michael

Author_Institution

Dept. of Tecnologias de las Communicaciones, Univ. of Vigo, Spain

Volume

48

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

395

Lastpage

405

Abstract

In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the γ-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related to nonlinear microwave computer-aided design and can be both easily extracted from dc and S-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will be described in this paper. Excellent results are obtained from dc up to the device f_T frequencies, even when f _T is as high as 100 GHz

Keywords

S-parameters; circuit CAD; delays; microwave field effect transistors; semiconductor device models; γ-parameters; S-parameter measurements; field-effect-transistor modeling; high-frequency broad-band large-signal field-effect-transistor; large-signal validation; linear delays; low-frequency dispersion; microwave computer-aided design; nonquasi-static table-based FET model; quadratic frequency dependency; simulation tools; Associate members; Bandwidth; Data mining; Design automation; FETs; Microwave devices; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Radio frequency;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.826838

Filename

826838