Title :
Doping level anomalies in p-InP resulting from exposure to dopant precursors during cool-down in MOVPE
Author :
Cole, S. ; Duncan, W.J. ; Marsh, E.M. ; Skevington, P.J. ; Spiller, G.D.T.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
3/15/1990 12:00:00 AM
Abstract :
Large dopant deactivation effects occur when p-InP is cooled in ambients containing DMZn. This does not appear to be the result of hydrogen passivation, rather the authors believe it to be caused by the presence of high concentrations of interstitial donors.
Keywords :
III-V semiconductors; doping profiles; indium compounds; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InP:Zn, H; MOVPE; SIMS; ambients; cool-down; dimethyl zinc; dopant deactivation effects; dopant precursors; epitaxial growth; interstitial donors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900255
