Title :
Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor
Author :
Ohishi, T. ; Abe, Y. ; Sugimoto, Hiroshi ; Ohtsuka, K. ; Matsui, Takashi
Author_Institution :
Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
3/15/1990 12:00:00 AM
Abstract :
A maximum DC current gain of 112000 was obtained by a double-layer base HBT with a thin base layer of 0.1 mu m thickness. The breakdown voltage with a common-emitter configuration was found to be 1.3 V, which is smaller than for conventional HBTs due to the ultrahigh current gain and carrier multiplication at the base-collector junction.
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 0.1 micron; 1.3 V; III-V semiconductors; InGaAsP-InP; base-collector junction; breakdown voltage; carrier multiplication; common-emitter configuration; double-layer base HBT; heterojunction bipolar transistor; maximum DC current gain; thin base layer; ultrahigh current gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900256
