Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Author

Takahata, Kiyoto ; Muramoto, Yoshifumi ; Fukano, Hideki ; Kato, Kazutoshi ; Kozen, Atsuo ; Kimura, Shunji ; Imai, Yuhki ; Miyamoto, Yutaka ; Nakajima, Osaake ; Matsuoka, Yutaka

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

Volume

6

Issue

1

fYear

2000

Firstpage

31

Lastpage

37

Abstract

A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMTs) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-/spl mu/m gate-length HEMTs have modest cutoff frequencies f/sub T//f/sub max/ of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-/spl mu/m wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

Keywords

HEMT integrated circuits; high-speed optical techniques; integrated circuit packaging; integrated optoelectronics; modules; optical receivers; p-i-n photodiodes; sensitivity; 1.55 mum; 40 Gbit/s; 46.5 GHz; 47 GHz; 49 GHz; 50 Gbit/s; HEMT; HEMT distributed amplifier; InP substrate; clear eye-opening; cutoff frequencies; distributed baseband amplifier; fiber-pig-tailed module; gate-length HEMT; high responsivity; high-electron mobility transistors; monolithically integrated; multimode waveguide p-i-n photodiode; receiver optoelectronic integrated circuit; sensitivity; stacked layer structure; ultrafast monolithic receiver OEIC; Bandwidth; Baseband; Cutoff frequency; Distributed amplifiers; HEMTs; Indium phosphide; MODFETs; Optoelectronic devices; PIN photodiodes; Waveguide components;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.826870

Filename

826870