Title :
Er/sup 3+/-doped channel optical waveguide amplifiers for WDM systems: a comparison of tellurite, alumina and Al/P silicate materials
Author :
Chryssou, C.E. ; Di Pasquale, F. ; Pitt, C.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
Er/sup 3+/-doped tellurite and Er/sup 3+/-doped alumina optical waveguide amplifiers are analyzed both as single amplifiers and as elements of 16-channel wavelength-division multiplexing (WDM) systems; their performances are compared with that from Er/sup 3+/-doped Al/P silica waveguide amplifiers. The amplifier model is based on propagation and population-rate equations and includes both uniform and pair-induced up-conversion mechanisms. It is solved numerically by combining finite elements and the Runge-Kutta algorithm. The analysis predicts that Er/sup 3+/-doped tellurite waveguides exhibit improved gain characteristics compared with alumina and Al/P silica waveguides. Using Er/sup 3+/-doped tellurite waveguide amplifiers, it is suggested that 16 WDM channels may be transmitted to a maximum distance of 4250 km. By using in-line notch gain equalizing filters, the maximum transmission distance can be increased to 5250 km.
Keywords :
Runge-Kutta methods; erbium; optical communication equipment; solid lasers; telecommunication channels; waveguide lasers; wavelength division multiplexing; 16-channel wavelength-division multiplexing systems; 4250 km; 5250 km; Er/sup 3+/-doped Al/P silica waveguide amplifiers; Er/sup 3+/-doped channel optical waveguide amplifiers; Er/sup 3+/-doped tellurite waveguide amplifiers; Er/sup 3+/-doped tellurite waveguides; Runge-Kutta algorithm; WDM systems; amplifier model; in-line notch gain equalizing filters; maximum distance; maximum transmission distance; pair-induced up-conversion mechanisms; Erbium; Optical amplifiers; Optical filters; Optical propagation; Optical waveguides; Performance analysis; Semiconductor optical amplifiers; Silicon compounds; Stimulated emission; Wavelength division multiplexing;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.826879