Title :
Charge collection in submicron CMOS/SOI technology
Author :
Musseau, O. ; Ferlet-Cavrois, V. ; Campbell, A.B. ; Knudson, A.R. ; Stapor, W.J. ; McDonald, P.T. ; Pelloie, J.L. ; Raynaud, C.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
We present experimental measurements of charge collection spectroscopy from high energy ion strikes in submicron CMOS/SOI devices. Due to the specific structure of SOI technology, with symmetrical source and drain junctions, a direct equivalence between upset mechanism and charge collection is established. The bipolar mechanism, responsible for the amplification of the deposited charge is discussed based on 2D device simulations. Based on the experimental data we determine qualitatively the influence of transistor geometry on the bipolar gain. Finally the limits of the usual SEU concepts (LET threshold and cross section) are discussed for scaled devices
Keywords :
CMOS integrated circuits; ion beam effects; silicon-on-insulator; 2D simulation; LET threshold; SEU; bipolar gain; charge amplification; charge collection spectroscopy; cross section; high energy ion strike; scaled device; submicron CMOS/SOI technology; transistor; upset; CMOS technology; Charge measurement; Current measurement; Dielectric thin films; Isolation technology; MOSFETs; Single event upset; Spectroscopy; Testing; Thin film transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
