DocumentCode
1308840
Title
Characteristics of high deposition rate PIN diodes from pure SiH 4 and 10% dilution of SiH4 in H2
Author
Estruda, M. ; Cerdeiva, A. ; Pereyra, I. ; Soto, B.S.
Author_Institution
Dept. de Ingenieria Electr., Inst. Politecnico Nacional, Mexico City, Mexico
Volume
47
Issue
1
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
33
Lastpage
35
Abstract
In this paper, we present the results of the electrical characterization of PIN diodes up to 18 μm thick fabricated on high deposition rates a-Si:H layers obtained from pure SiH4 and from a 10% dilution of SiH4 in H2, using a 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with geometrical modifications in the plasma reactor. I-V and I-T curves were investigated, concluding that the changes introduced in the deposition reactor to increase the deposition rate did not affect the characteristics of the fabricated diodes. Results are compared with characteristics, reported for diodes obtained by standard and other high deposition rate methods
Keywords
p-i-n diodes; plasma CVD; silicon compounds; silicon radiation detectors; 13.56 MHz; 18 micron; H2; I-T curve; I-V curve; PECVD; PIN diodes; Si:H; SiH4; a-Si:H layers; deposition rate; high deposition rate; plasma enhanced chemical vapor deposition; Amorphous materials; Amorphous silicon; Chemical vapor deposition; Chromium; Diodes; Electrodes; Inductors; Plasma chemistry; Plasma properties; Radiofrequency identification;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.826895
Filename
826895
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