Title :
Low-threshold oxide-confined 1.3-μm quantum-dot laser
Author :
Gyoungwon Park ; Shchekin, O.B. ; Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm2 is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm2.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.2 mA; 1.3 mum; 298 K; InGaAs-GaAs; InGaAs-GaAs quantum dot lasers; continuous-wave threshold current; continuous-wave threshold current density; low threshold 1.3-/spl mu/m oxide-confined laser; p-up mounting; quantum-dot laser; room temperature; threshold current density; Fiber lasers; Gallium arsenide; Laser modes; Laser stability; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
