Title :
The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier
Author :
Kobayashi, K.W. ; Oki, A.K. ; Cowles, J. ; Tran, L.T. ; Grossman, P.C. ; Block, T.R. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
3/1/1997 12:00:00 AM
Abstract :
Here we report on the first IP3 results of a 35-GHz Ka-band amplifier based on InAlAs/InGaAs-InP heterofunction bipolar transistors (HBT´s). The amplifier combines four 1×10 μm2 quad-emitter HBT devices for a total emitter area of 160 μm2 to achieve a gain of 5 dB and an IP3 of 26.5 dBm at 35 GHz. IP3 was characterized over collector bias voltage and indicates that there is an optimum V/sub ce/, corresponding to a maximum IP3 to DC power ratio, which is related to the HBT nonlinear voltage-dependent collector-base capacitance. A maximum IP3-to-DC power linearity figure of merit (LFOM) of 4.1 is achieved at a total collector current of 48 mA and a low V/sub ce/ of 2.25 V, This LFOM is comparable to HEMT´s at these frequencies and is expected to improve with the maturity of InAlAs/InGaAs-InP HBT technology.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 2.25 V; 35 GHz; 48 mA; 5 dB; EHF; InAlAs-InGaAs-InP; InAlAs/InGaAs-InP HBT amplifier; Ka-band amplifier; MM-wave amplifier; collector bias voltage; heterofunction bipolar transistors; quad-emitter HBT devices; voltage-dependent IP3 performance; Capacitance; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Linearity; Millimeter wave technology; Millimeter wave transistors; P-i-n diodes; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
