Title :
Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer
Author :
Liu, C.P. ; Seeds, A.J. ; Wake, D.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
3/1/1997 12:00:00 AM
Abstract :
We report the first experimental results for optoelectronic mixing using a two-terminal edge-coupled InP/InGaAs heterojunction phototransistor (HPT). The HPT optoelectronic mixer (OEM) exhibits a maximum of 7-dB conversion gain relative to a 100% quantum efficient photodetector operated at the optical modulation frequency. We give a qualitative explanation for the observed conversion gain variation with the HPT bias voltage
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; mixers (circuits); phototransistors; 7 dB; InP-InGaAs; conversion gain; microwave optoelectronics; optoelectronic mixer; two-terminal edge-coupled InP/InGaAs heterojunction phototransistor; Frequency conversion; Heterojunctions; Indium gallium arsenide; Indium phosphide; Mixers; Optical frequency conversion; Optical modulation; Photodetectors; Phototransistors; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
