DocumentCode
1308886
Title
Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer
Author
Liu, C.P. ; Seeds, A.J. ; Wake, D.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume
7
Issue
3
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
72
Lastpage
74
Abstract
We report the first experimental results for optoelectronic mixing using a two-terminal edge-coupled InP/InGaAs heterojunction phototransistor (HPT). The HPT optoelectronic mixer (OEM) exhibits a maximum of 7-dB conversion gain relative to a 100% quantum efficient photodetector operated at the optical modulation frequency. We give a qualitative explanation for the observed conversion gain variation with the HPT bias voltage
Keywords
III-V semiconductors; gallium arsenide; indium compounds; mixers (circuits); phototransistors; 7 dB; InP-InGaAs; conversion gain; microwave optoelectronics; optoelectronic mixer; two-terminal edge-coupled InP/InGaAs heterojunction phototransistor; Frequency conversion; Heterojunctions; Indium gallium arsenide; Indium phosphide; Mixers; Optical frequency conversion; Optical modulation; Photodetectors; Phototransistors; Voltage;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.556036
Filename
556036
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