A novel approach to extracting small-signal model parameters of silicon MOSFET´s

Author

Lee, Seonghearn ; Yu, Hyun Kyu ; Kim, Cheon Soo ; Koo, Jin Gun ; Nam, Kee Soo

Author_Institution

Dept. of Electron. Eng., Hunkuk Univ. of Foreign Studies, Yongin, South Korea

Volume

7

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

75

Lastpage

77

Abstract

We present a simple and accurate method to extract a small-signal equivalent circuit model of Si MOSFET´s, based on the novel approach to determining parasitic inductances and resistances by fitting the frequency response of new analytic expressions with Z-parameters. This method is proposed to overcome the serious problem that conventional cold-FET methods cannot be applied for MOSFET´s, and is also superior to the traditional optimization of the entire model parameters to fit the measured S-parameters. In particular, this technique is simple and reliable because no additional measurements are needed. The excellent correspondence is achieved between modeled and measured S-parameters from 0.5 to 39.5 GHz

Keywords

MOSFET; S-parameters; elemental semiconductors; equivalent circuits; frequency response; microwave field effect transistors; semiconductor device models; silicon; 0.5 to 39.5 GHz; S-parameters; Si; Si MOSFET; Z-parameters; equivalent circuit model; frequency response; parameter extraction; parasitic inductances; parasitic resistances; small-signal model parameters; Data mining; Electrical resistance measurement; Equations; Equivalent circuits; Frequency response; Length measurement; MOSFET circuits; Parameter extraction; Robustness; Silicon;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.556037

Filename

556037