A frequency dispersion model of GaAs MESFET for large-signal applications

Author

Jeon, Kye-Ik ; Kwon, Young-Se ; Hong, Song-Cheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

7

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

78

Lastpage

80

Abstract

Deficiencies in conventional frequency dispersion models of GaAs MESFET are addressed regarding their large-signal response. A new model which can accurately describes the large-signal dynamic properties is proposed. Only DC and scattering parameter data are required to extract the model parameters, which can be easily implemented into microwave circuit simulators in the macro circuit form. The validity of this model is demonstrated by comparing predicted pulsed I-V characteristics and power saturation characteristics with measured ones

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; DC parameter data; GaAs; GaAs MESFET; frequency dispersion model; large-signal applications; large-signal response; macro circuit form; microwave circuit simulators; model parameters extraction; power saturation characteristics; pulsed I-V characteristics; scattering parameter data; Circuit simulation; Data mining; Frequency; Gallium arsenide; MESFETs; Microwave circuits; Power measurement; Predictive models; Pulse measurements; Scattering parameters;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.556038

Filename

556038