Low-temperature optimized vertical-cavity lasers with submilliamp threshold currents over the 77-370 K temperature range

Author

Akulova, Y.A. ; Thibeault, B.J. ; Ko, J. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

9

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

277

Lastpage

279

Abstract

We demonstrate an extended temperature range (77-370 K) of continuous wave (CW) operation for dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs strained QW lasers optimized for operation at cryogenic temperatures. Superior performance is achieved through the alignment of the cavity mode with the gain of the first and second quantized subbands at 77 K and room temperature, respectively. This design results in submilliamp threshold currents over a 77-370 K temperature range for 5.4-μm diameter lasers. The threshold is 120 μA and the output power is >8 mW at 77 K.

Keywords

III-V semiconductors; cryogenics; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optimisation; quantum well lasers; surface emitting lasers; 120 muA; 370 K; 5.4 mum; 77 to 370 K; 8 mW; CW operation; InGaAs; InGaAs strained QW lasers; cavity mode; cryogenic temperatures; dielectrically-apertured double-intracavity-contacted vertical-cavity lasers; low-temperature optimized vertical-cavity lasers; output power; quantized subbands; room temperature; submilliamp threshold currents; temperature range; Cryogenics; Dielectrics; Indium gallium arsenide; Laser modes; Optical design; Performance gain; Power generation; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.556045

Filename

556045