DocumentCode
1308933
Title
A quantum cascade laser based on an n-i-p-i superlattice
Author
Faist, Jerome ; Müller, Antoine ; Beck, Mattias ; Hofstetter, Daniel ; Blaser, Stephane ; Oesterle, Ursula ; Ilegems, Marc
Author_Institution
Neuchatel Univ., Switzerland
Volume
12
Issue
3
fYear
2000
fDate
3/1/2000 12:00:00 AM
Firstpage
263
Lastpage
265
Abstract
We demonstrate a quantum cascade laser with a novel injection concept. Periodic insertion of silicon- and beryllium-doped layers are used to control locally the internal electric field in the active region. This concept is demonstrated experimentally using an active region based on a periodic superlattice.
Keywords
III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; indium compounds; laser beams; laser transitions; quantum well lasers; semiconductor lasers; semiconductor superlattices; waveguide lasers; AlInAs; Be-doped layers; InGaAs; InGaAs-AlInAs; Si-doped layers; active region; injection concept; internal electric field; n-i-p-i superlattice; periodic insertion; periodic superlattice; quantum cascade laser; Chirp; Dielectric constant; Doping; Electrons; Oscillators; Quantum cascade lasers; Quantum well lasers; Superlattices; Threshold current; Tunneling;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.826908
Filename
826908
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