Precise wavelength control for DFB laser diodes by novel corrugation delineation method

Author

Muroya, Y. ; Nakamura, T. ; Yamada, H. ; Torikai, T.

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Otsu, Japan

Volume

9

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

288

Lastpage

290

Abstract

Precise wavelength control of a multiple-wavelength DFB InGaAsP strained MQW laser-diode (LD) array was achieved using weighted-dose allocation variable-pitch EB-lithography (WAVE) and highly uniform MOVPE. Multiple-wavelength 1.3 μm /spl lambda//4-shifted DFB LD arrays with wavelength spacing of 2.0 nm were successfully demonstrated. The standard deviation of the wavelength was as low as 0.37 nm over 2-in wafers.

Keywords

III-V semiconductors; distributed feedback lasers; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser frequency stability; laser transitions; optical transmitters; quantum well lasers; semiconductor laser arrays; wavelength division multiplexing; /spl lambda//4-shifted DFB LD arrays; 1.3 mum; DFB laser diodes; InGaAsP; corrugation delineation method; highly uniform MOVPE; multiple-wavelength DFB InGaAsP strained MQW laser-diode array; precise wavelength control; standard deviation; wavelength spacing; weighted-dose allocation variable-pitch EB-lithography; Arrayed waveguide gratings; Diode lasers; Distributed feedback devices; Epitaxial layers; Laser feedback; Lithography; Optical arrays; Optical control; Semiconductor laser arrays; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.556049

Filename

556049