• DocumentCode
    1308973
  • Title

    Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature

  • Author

    Sirtori, C. ; Faist, J. ; Capasso, F. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, A.Y.

  • Author_Institution
    Bell Labs., Lucent Technol., Murray Hill, NJ, USA
  • Volume
    9
  • Issue
    3
  • fYear
    1997
  • fDate
    3/1/1997 12:00:00 AM
  • Firstpage
    294
  • Lastpage
    296
  • Abstract
    The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 μm is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm2. The temperature dependence of the threshold current density is described by a high T0 (107 K) in the 200-320 K temperature range.
  • Keywords
    current density; infrared sources; laser transitions; population inversion; quantum well lasers; 107 K; 15 mW; 200 to 320 K; 300 K; 8.5 mum; IR lasers; current density; mid-infrared semiconductor lasers; optimized vertical transition quantum cascade laser; peak output power; room-temperature pulsed operation; single facet; temperature dependence; temperature range; threshold current density; Laser transitions; Optical pulses; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Resonance; Semiconductor lasers; Temperature; Wave functions;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.556051
  • Filename
    556051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308973