Title :
Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature
Author :
Sirtori, C. ; Faist, J. ; Capasso, F. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, A.Y.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fDate :
3/1/1997 12:00:00 AM
Abstract :
The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 μm is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm2. The temperature dependence of the threshold current density is described by a high T0 (107 K) in the 200-320 K temperature range.
Keywords :
current density; infrared sources; laser transitions; population inversion; quantum well lasers; 107 K; 15 mW; 200 to 320 K; 300 K; 8.5 mum; IR lasers; current density; mid-infrared semiconductor lasers; optimized vertical transition quantum cascade laser; peak output power; room-temperature pulsed operation; single facet; temperature dependence; temperature range; threshold current density; Laser transitions; Optical pulses; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Resonance; Semiconductor lasers; Temperature; Wave functions;
Journal_Title :
Photonics Technology Letters, IEEE
