Title :
Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique
Author :
Qiu, B.C. ; Qian, Y.H. ; Kowalski, O.P. ; Bryce, A.C. ; Aitchison, J.S. ; De La Rue, R.M. ; Marsh, J.H. ; Owen, M. ; White, Ian H. ; Penty, Richard V. ; Franzen, A. ; Hunter, D.K. ; Andonovic, I.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
3/1/2000 12:00:00 AM
Abstract :
We report the fabrication of a 2×2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO2 technique for quantum-well intermixing. The static performance of the modulators has been tested, and a modulation depth of 25 dB has been obtained at a wavelength of 1.55 μm for an applied bias of 2 V.
Keywords :
electro-optical modulation; electro-optical switches; electroabsorption; integrated optoelectronics; optical communication equipment; optical fabrication; optical planar waveguides; semiconductor quantum wells; sputter deposition; telecommunication switching; 1.55 mum; 2 V; 2/spl times/2 crosspoint switch fabrication; 2/spl times/2 crosspoint switches; SiO/sub 2/; applied bias; electroabsorption modulators; modulation depth; monolithically integrates; passive waveguides; quantum-well intermixing; sputtered SiO/sub 2/ intermixing technique; sputtered SiO/sub 2/ technique; static performance; Absorption; Communication switching; Insertion loss; Monolithic integrated circuits; Optical device fabrication; Optical fiber communication; Optical packet switching; Optical switches; Photonic band gap; Quantum wells;
Journal_Title :
Photonics Technology Letters, IEEE
