DocumentCode :
1308990
Title :
Approximate dynamic model for evaluating distortion in a semiconductor laser under overmodulation
Author :
Le Bihan, J.
Author_Institution :
Lab. RESO, Ecole Nat. d´´Ingenieurs de Brest, France
Volume :
9
Issue :
3
fYear :
1997
fDate :
3/1/1997 12:00:00 AM
Firstpage :
303
Lastpage :
305
Abstract :
Overmodulation of a directly modulated semiconductor laser causes distortion in the optical signal. This distortion can be analyzed, in a first approach, using the model of a static limiter for the laser. In this letter, the dynamic effects in overmodulation of a semiconductor laser are addressed for a sinusoidal modulating current and an improved model is proposed by introducing an hysteresis. A time delay is taken into account for evaluating additional dynamic distortion arising when the optical intensity rises above threshold.
Keywords :
electro-optical modulation; laser beams; laser theory; limiters; semiconductor lasers; subcarrier multiplexing; approximate dynamic model; directly modulated semiconductor laser; distortion evaluation; dynamic distortion; dynamic effects; hysteresis; optical intensity; optical signal; overmodulation; semiconductor laser; sinusoidal modulating current; static limiter; threshold; time delay; Delay effects; Equations; Frequency; Hysteresis; Laser modes; Laser noise; Optical distortion; Optical fiber communication; Optical modulation; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.556054
Filename :
556054
Link To Document :
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