High-gain 1310 nm semiconductor optical amplifier modules with a built-in amplified signal monitor for optical gain control

Author

Tiemeijer, L.F. ; Walczyk, S. ; Verboven, A.J.M. ; van den Hoven, G.N. ; Thijs, P.J.A. ; Van Dongen, T. ; Binsma, J.J.M. ; Jansen, E.J.

Author_Institution

Philips Optoelectron. Centre, Eindhoven, Netherlands

Volume

9

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

309

Lastpage

311

Abstract

A compact high-gain 1310-nm semiconductor optical amplifier (SOA) module incorporating two photodiodes to detect radiation emitted from the two opposite facets of the amplifier chip is reported. By subtracting their signals, a measure of the amplified signal is obtained without the need for optical filtering, Using this, amplified signals can be stabilized within 0.5 dB over a 25-dB range of input signals.

Keywords

gain control; laser transitions; modules; optical variables control; photodiodes; physical instrumentation control; quantum well lasers; 1310 nm; 1310 nm semiconductor optical amplifier modules; MQW optical amplifier chip; SOA; amplified signal; amplifier chip; built-in amplified signal monitor; high-gain; input signals; optical gain control; photodiodes; Face detection; Gain control; Monitoring; Optical control; Optical filters; Photodiodes; Radiation detectors; Semiconductor optical amplifiers; Semiconductor radiation detectors; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.556056

Filename

556056