Title :
3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature
Author :
Vizbaras, K. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6 μm is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862 A/cm2 at infinite resonator length at 15°C and 20°mW of average output power per facet.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; current density; gallium compounds; indium compounds; laser cavity resonators; optical pulse generation; quantum well lasers; ridge waveguides; waveguide lasers; AlGaInAsSb; compressively strained quantum-wells; episide-up mounted ridge waveguide lasers; optical resonator; pulsed operation; quinternary barriers; temperature 293 K to 298 K; threshold current density; type-I lasers; wavelength 3.6 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.2032
