Title :
Heavy ion and proton-induced single event multiple upset
Author :
Reed, R.A. ; Carts, M.A. ; Marshall, P.W. ; Marshall, C.J. ; Musseau, O. ; McNulty, P.J. ; Roth, D.R. ; Buchner, S. ; Melinger, J. ; Corbière, T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees
Keywords :
CMOS memory circuits; Monte Carlo methods; SRAM chips; VLSI; cellular arrays; circuit analysis computing; ion beam effects; nuclear spallation; proton effects; adjacent memory cells; dual volume Monte-Carlo simulation code; grazing angles; heavy ion events; heavy-ion irradiation; high density CMOS SRAM; normal incidence; proton-induced spallation reaction; single event multiple upset; single-particle events; CMOS logic circuits; Equations; Fabrication; Geometry; Hardware; Laboratories; Particle beams; Protons; Random access memory; Semiconductor device manufacture;
Journal_Title :
Nuclear Science, IEEE Transactions on
