Title :
High frequency gallium arsenide linearised transconductor for communications
Author :
Haigh, D.G. ; Toumazou, C.
Author_Institution :
Univ. Coll., London, UK
fDate :
4/14/1990 12:00:00 AM
Abstract :
The authors propose a linear transconductor circuit for implementation in GaAs MESFET technology. The application of the transconductor to linear microwave amplifiers and linear drive circuits for optical systems is described.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; driver circuits; field effect transistor circuits; gallium arsenide; microwave amplifiers; optical communication equipment; solid-state microwave circuits; GaAs; MESFET technology; laser diode driver; linear drive circuits; linear microwave amplifiers; linear transconductor circuit; optical systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900323
