• DocumentCode
    1309564
  • Title

    Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]

  • Author

    Ecoffet, R. ; Duzellier, S. ; Falguère, D. ; Guibert, L. ; Inguimbert, C.

  • Author_Institution
    CNES, Toulouse, France
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2230
  • Lastpage
    2236
  • Abstract
    This paper reports on results from high energy heavy ion testing of devices. The low LET zones of the cross-section curves are explored. High and low energy measurements are compared
  • Keywords
    DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; C; DRAMs; IC radiation effects; LET cross-section measurements; SRAMs; energy measurements; high energy heavy ion testing; space vehicle electronics; Cosmic rays; Energy measurement; Error correction; Ionization; Particle beams; Protons; Random access memory; Space stations; Testing; USA Councils;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.659040
  • Filename
    659040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1309564