Title :
Controlled amplifier modelocked Er3+ fibre ring laser
Author :
Burns, D. ; Sibbett, W.
Author_Institution :
Dept. of Phys. & Astron., St. Andrews Univ., UK
fDate :
4/14/1990 12:00:00 AM
Abstract :
An erbium-doped fibre ring has been actively modelocked with an InGaAsP semiconductor amplifier employed as a modulator. Pulses having durations <4ps and peak powers of approximately 2 W around 1536 nm have been generated at a repetition frequency of 612 MHz by this new technique of controlled-amplifier modelocking (CAM).
Keywords :
erbium; laser mode locking; laser transitions; optical fibres; silicon compounds; solid lasers; 1536 nm; 2 W; 3.7 to 4 ps; 612 MHz; Er doped silica fibre; Er 3+ fibre ring laser; InGaAsP semiconductor amplifier; SiO 2:Er 3+; actively modelocked; controlled-amplifier modelocking; intracavity modulator; picosecond pulse generation; solid lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900328
