Pion-induced soft upsets in 16 mbit DRAM chips

Author

Gelderloos, C.J. ; Peterson, R.J. ; Nelson, M.E. ; Ziegler, J.F.

Author_Institution

Nucl. Phys. Lab., Colorado Univ., Boulder, CO, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2237

Lastpage

2242

Abstract

Measurements of the soft upset cross section due to energetic charged pions were made in various 16 Mbit memory chips, as a function of incident pion energy and for chips with different cell technologies. Significant differences are seen to exist between cell technologies, up to a factor of 1000 in cross section. Upset cross sections are reported that exhibit proportionality to the reaction cross section for pions on silicon, including the well-known enhancement over proton and neutron cross sections near the delta resonance. Implications of this enhancement for pion-induced upsets due to cosmic ray fluxes are discussed

Keywords

DRAM chips; avionics; cellular arrays; cosmic ray interactions; integrated circuit testing; meson effects; 16 Mbit; DRAM chips; cell technologies; cosmic ray fluxes; delta resonance; energetic charged pions; pion-induced soft upsets; soft upset cross section; upset cross sections; Aircraft; Current measurement; Energy measurement; Laboratories; Mesons; Neutrons; Protons; Sea level; Sea measurements; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659041

Filename

659041