DocumentCode
1309634
Title
Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power
Author
Bagley, M. ; Sherlock, G. ; Cooper, D.M. ; Westbrook, L.D. ; Elton, D.J. ; Wickes, H.J. ; Spurdens, P.C. ; Devlin, W.J.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
26
Issue
8
fYear
1990
fDate
4/14/1990 12:00:00 AM
Firstpage
512
Lastpage
513
Abstract
Broadband operation of GRIN-SC-MQW BH amplifiers is reported with 115 mW output power at 1.54 mu m and 3 dB gain compression. Gain is flat to 0.7 dB over the range 1.42-1.55 mu m. Polarisation sensitivity reduces from 4.5 dB at 1.55 mu m to 1.4 dB at 1.415 mu m.
Keywords
III-V semiconductors; amplifiers; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor junction lasers; 1.415 to 1.55 micron; 115 mW; 8.4 to 13.3 dB; GRIN-SC-MQW BH amplifiers; III-V semiconductors; InGaAsP-InGaAs; broadband operation; buried heterostructure; multiple quantum well; polarisation sensitivity; semiconductor lasers; separate confinement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900333
Filename
82716
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