Title :
Ultra-high gain, low noise monolithic InP HEMT distributed amplifier from 5 to 40 GHz
Author :
Yuen, Chau ; Poo, Y.-C. ; Day, Michael ; Nishmimoto, C. ; Glenn, M. ; Bandy, S. ; Zdasivk, C.
Author_Institution :
Varian Res. Center Palo Alto, CA, USA
fDate :
4/14/1990 12:00:00 AM
Abstract :
A monolithic 5-45 GHz distributed amplifier has been developed utilising 0.25 mu m InAlAs/InGaAs lattice matched HEMTs with a mushroom gate profile as active devices. A measured gain of 12.5+or-0.5 dB from 5 to 40 GHz and a measured noise figure of 2.5-4 dB in the Ka-band were achieved.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 12.5 dB; 2.5 to 4 dB; 5 to 40 GHz; EHF; III-V semiconductors; InGaAs-InAlAs-InP; InP; Ka-band; LNA; MMIC; SHF; distributed amplifier; lattice matched; monolithic microwave IC; mushroom gate profile; ultrahigh gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900335
