DocumentCode
1309695
Title
An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique
Author
Kim, Sungho ; Choi, Sung-Jin ; Moon, Dong-Il ; Choi, Yang-Kyu
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
58
Issue
11
fYear
2011
Firstpage
3667
Lastpage
3673
Abstract
The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is useful to extract the energy distribution of interface traps, as well as the interface-trap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques.
Keywords
MOSFET; charge pump circuits; elemental semiconductors; interface states; silicon; silicon-on-insulator; SOI MOSFET; Si; data extraction; interface trap energy distribution extraction method; interface-trap density; nanoscale FB device; nanoscale floating-body device; optically assisted CP technique; optically assisted charge pumping technique; silicon-on-insulator metal-oxide-semiconductor field-effect transistor; square pulse; subthreshold-slope technique; Charge carrier processes; Data mining; Logic gates; Optical devices; Optical pulses; Optical pumping; Optical variables measurement; Charge pumping (CP); floating-body (FB); interface trap; silicon-on-insulator metal–oxide–semiconductor field-effect transistor (SOI MOSFET); trap energy level;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2163146
Filename
6004828
Link To Document