Title :
An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique
Author :
Kim, Sungho ; Choi, Sung-Jin ; Moon, Dong-Il ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is useful to extract the energy distribution of interface traps, as well as the interface-trap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques.
Keywords :
MOSFET; charge pump circuits; elemental semiconductors; interface states; silicon; silicon-on-insulator; SOI MOSFET; Si; data extraction; interface trap energy distribution extraction method; interface-trap density; nanoscale FB device; nanoscale floating-body device; optically assisted CP technique; optically assisted charge pumping technique; silicon-on-insulator metal-oxide-semiconductor field-effect transistor; square pulse; subthreshold-slope technique; Charge carrier processes; Data mining; Logic gates; Optical devices; Optical pulses; Optical pumping; Optical variables measurement; Charge pumping (CP); floating-body (FB); interface trap; silicon-on-insulator metal–oxide–semiconductor field-effect transistor (SOI MOSFET); trap energy level;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2163146