Title :
A 120–145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications
Author :
Koch, Stefan ; Guthoerl, Marc ; Kallfass, Ingmar ; Leuther, Arnulf ; Saito, Shin
Author_Institution :
Sony Deutschland GmbH, Stuttgart, Germany
Abstract :
For passive mm-wave imaging applications, broadband mm-wave receivers functioning within atmospheric windows are highly desired. Within this paper, a heterodyne receiver chipset utilizing the 140 GHz atmospheric window is presented. The heterodyne chipset is based on two different millimeter-wave monolithic integrated circuits (MIMICs). One is the receiver MIMIC including a low-noise amplifier, a down-conversion mixer, a frequency multiplier and a local oscillator buffer amplifier together with a local oscillator distribution network. The other is a voltage-controlled oscillator (VCO) working in the 35 GHz frequency range to generate the local oscillator signal for the receiver (down-converter) chip. The process technology chosen to realize the chipset is a 100 nm gatelength metamorphic InAlAs/InGaAs high electron mobility transistor (HEMT) technology on 50 μm thick and 4 inch diameter GaAs substrates. The chips are utilizing a grounded coplanar waveguide (GCPW) technology. For an operation frequency band from 120 to 145 GHz, the receiver demonstrates a flat conversion gain between -1 and +2 dB with a power consumption of 120 mW. The VCO is tuneable from 31 to 37 GHz with associated output power levels from -2 to +1 dBm. Detailed descriptions of the individual building blocks are given and measured results are presented for the building blocks as well as for the receiver.
Keywords :
HEMT integrated circuits; MIMIC; coplanar waveguides; heterodyne detection; millimetre wave imaging; radio receivers; voltage-controlled oscillators; HEMT technology; MIMIC; VCO; atmospheric windows; broadband mm wave receivers; chipset utilization; frequency 120 GHz to 145 GHz; frequency 31 GHz to 37 GHz; frequency 35 GHz; grounded coplanar waveguide; heterodyne receiver; high electron mobility transistor; millimeter wave monolithic integrated circuit; mm wave imaging; power 120 mW; voltage controlled oscillator; wavelength 100 nm; Frequency measurement; Gain; Mixers; Noise; Receivers; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2010.2057830