DocumentCode :
1309811
Title :
Silicon Filled Integrated Waveguides
Author :
Gentile, G. ; Dekker, Ronald ; De Graaf, Pascal ; Spirito, M. ; Pelk, M.J. ; de Vreede, L.C.N. ; Salmassi, B. Rejaei
Author_Institution :
DIMES Inst., Delft Univ. of Technol., Delft, Netherlands
Volume :
20
Issue :
10
fYear :
2010
Firstpage :
536
Lastpage :
538
Abstract :
In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE10-like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.
Keywords :
MIMIC; substrate integrated waveguides; HFSS simulations; MIMIC; frequency 35 GHz; frequency 50 GHz; frequency 77 GHz; silicon filled integrated waveguides; slow-wave factor; substrate transfer; waveguide structures; Coplanar waveguides; Integrated circuits; Optical waveguides; Silicon; Substrates; Transmission line measurements; Waveguide transitions; Millimeter-wave; silicon filled; silicon-on-glass; substrate integrated waveguide (SIW); substrate transfer;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2063420
Filename :
5560693
Link To Document :
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