Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

Author

Zah, C.E. ; Bhat, R. ; Menocal, S.G. ; Favire, F. ; Andreadakis, N.C. ; Koza, M.A. ; Caneau, C. ; Schwarz, S.A. ; Lo, Y. ; Lee, T.P.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

2

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

231

Lastpage

233

Abstract

High-power, 1.5- mu m, ridge-waveguide lasers with GaInAs/GaInAsP multiple-quantum-well active layers are discussed. For 1-mm-long devices, a threshold current of 35 mA and an output power of 62 mW per facet were measured. The cavity-length and doping dependence of the threshold current, quantum efficiency, and resonant frequency were investigated experimentally. With heavy Zn doping in the barrier layers, an increase in differential gain by a factor of 1.8 was observed.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; indium compounds; laser cavity resonators; optical waveguides; semiconductor junction lasers; semiconductor quantum wells; zinc; 1 mm; 1.5 micron; GaInAs-GaInAsP; Zn; barrier layers; cavity-length; differential gain; doping dependence; heavy Zn doping; multiple quantum well laser characteristics; quantum efficiency; resonant frequency; ridge-waveguide lasers; threshold current; Current measurement; Diode lasers; Doping; Optical modulation; Parasitic capacitance; Power generation; Quantum well devices; Quantum well lasers; Resonant frequency; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.53245

Filename

53245