DocumentCode :
1309950
Title :
A High-Responsivity GaN Nanowire UV Photodetector
Author :
Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Wang, S.B. ; Hsueh, H.T. ; Huang, G.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
17
Issue :
4
fYear :
2011
Firstpage :
996
Lastpage :
1001
Abstract :
The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.
Keywords :
III-V semiconductors; gallium compounds; nanowires; photodetectors; semiconductor quantum wires; ultraviolet detectors; ultraviolet spectra; visible spectra; wide band gap semiconductors; Ga2O3; GaN; GaN NW photodetector; UV photodetector; UV-to-visible rejection ratio; ammonification; high-responsivity GaN nanowire; Gallium nitride; Gold; Lighting; Photoconductivity; Photodetectors; X-ray scattering; Zinc oxide; GaN, nanowires (NWs), ultraviolet photodetectors (UV PDs);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2010.2060715
Filename :
5560711
Link To Document :
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