A High-Responsivity GaN Nanowire UV Photodetector

Author

Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Wang, S.B. ; Hsueh, H.T. ; Huang, G.J.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

17

Issue

4

fYear

2011

Firstpage

996

Lastpage

1001

Abstract

The authors report the conversion of β-Ga₂O₃ nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

Keywords

III-V semiconductors; gallium compounds; nanowires; photodetectors; semiconductor quantum wires; ultraviolet detectors; ultraviolet spectra; visible spectra; wide band gap semiconductors; Ga₂O₃; GaN; GaN NW photodetector; UV photodetector; UV-to-visible rejection ratio; ammonification; high-responsivity GaN nanowire; Gallium nitride; Gold; Lighting; Photoconductivity; Photodetectors; X-ray scattering; Zinc oxide; GaN, nanowires (NWs), ultraviolet photodetectors (UV PDs);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2010.2060715

Filename

5560711