Growth and Characterization of ZnSe/CdSe Multiquantum Disks

Author

Chang, S.J. ; Hsiao, C.H. ; Hung, S.C. ; Young, S.J. ; Cheng, Y.C. ; Huang, B.R. ; Wang, S.B. ; Chih, S.H. ; Chen, T.P.

Author_Institution

Dept. of Elec trical Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

17

Issue

4

fYear

2011

Firstpage

779

Lastpage

784

Abstract

The authors report the growth of high-density ZnSe/CdSe multiquantum disks on oxidized Si substrate. It was found the as-grown nanotips were tapered with the mixture of cubic zinc blende and hexagonal wurtzite structures. Also, photoluminescence intensities observed from these ZnSe/CdSe multiquantum disks were much larger than that observed from the homogeneous ZnSe. Activation energies for the ZnSe/CdSe multiquantum disks with well widths L_w of 8, 12, and 16 nm were 22, 62, and 56 meV, respectively.

Keywords

II-VI semiconductors; cadmium compounds; photoluminescence; semiconductor quantum dots; silicon; wide band gap semiconductors; zinc compounds; Si; ZnSe-CdSe; ZnSe/CdSe multiquantum disks; as-grown nanotips; cubic zinc blende; hexagonal wurtzite structures; oxidized Si substrate; photoluminescence intensities; Gallium nitride; Molecular beam epitaxial growth; Nanowires; Photoluminescence; Silicon; Substrates; Zinc oxide; Molecular beam epitaxy (MBE); ZnSe/CdSe; multiquantum disks; photoluminescence (PL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2010.2061838

Filename

5560712