DocumentCode :
1309998
Title :
VLSI parasitic capacitance determination by flux tubes
Author :
Dierking, W.H. ; Bastian, J.D.
Author_Institution :
Rockwell Internat. Microelectronics Res. & Dev. Center, Anaheim, CA, USA
Volume :
4
Issue :
1
fYear :
1982
fDate :
3/1/1982 12:00:00 AM
Firstpage :
11
Lastpage :
18
Abstract :
A two-dimensional numerical approach for calculating capacitance between two conductors through different dielectrics is developed. The approach uses Laplace´s equation in two dimensions to determine potentials on a grid system between the conductors. Equipotential lines are generated using these potentials and curvilinear squares can be formed to construct the flux tubes between the conductors. The application of Gauss´s law to these potentials provides the charge on a conductor and results in the determination of capacitance values.
Keywords :
capacitance; large scale integration; numerical methods; Gauss´s law; Laplace´s equation; VLSI parasitic capacitance determination; curvilinear squares; flux tubes; grid system; two-dimensional numerical approach; Capacitance; Computers; Conductors; Dielectrics; Electric potential; Electron tubes; Mirrors;
fLanguage :
English
Journal_Title :
Circuits & Systems Magazine
Publisher :
ieee
ISSN :
0163-6812
Type :
jour
DOI :
10.1109/MCAS.1982.6323835
Filename :
6323835
Link To Document :
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