Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications

Author

Jeon, Sanghun ; Kim, Sun Il ; Park, Sungho ; Song, Ihun ; Park, Jaechul ; Kim, Sangwook ; Kim, Changjung

Author_Institution

Semicond. Device Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

31

Issue

10

fYear

2010

Firstpage

1128

Lastpage

1130

Abstract

In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant low-frequency noise mechanism in both devices. The use of a high-mobility bilayer oxide TFT with scaled gate length is still valid for reducing low-frequency noise.

Keywords

II-VI semiconductors; analogue integrated circuits; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InZnO-InGaZnO; analog device; bilayer oxide TFT; bilayer thin film transistor; carrier number fluctuation; low-frequency noise performance; normalized noise; single-layer oxide TFT; thin interfacial layer; Logic gates; Low-frequency noise; Thin film transistors; Threshold voltage; Analog device applications; bilayer oxide semiconductor; electron devices; noise performance; thin-film devices; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2059694

Filename

5560723