DocumentCode
1310060
Title
Fermi-Level Pinning at Metal/High- 
Interface Influenced by Electron State Density of Metal Gate
Author
Yang, Z.C. ; Huang, A.P. ; Zheng, X.H. ; Xiao, Z.S. ; Liu, X.Y. ; Zhang, X.W. ; Chu, Paul K. ; Wang, W.W.
Author_Institution
Dept. of Phys., Beihang Univ., Beijing, China
Volume
31
Issue
10
fYear
2010
Firstpage
1101
Lastpage
1103
Abstract
The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.
Keywords
Fermi level; MIS devices; electronic density of states; high-k dielectric thin films; FLP; electron state density; fermi-level pinning; high-k interface; image charge; interface charge; metal gate; metal interface; vacuum level distortion; Cities and towns; Dielectrics; High K dielectric materials; Logic gates; Metals; Permittivity; Physics; Electron state density; Fermi-level pinning (FLP); MIS structures; work function (WF);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2062171
Filename
5560726
Link To Document