DocumentCode :
1310091
Title :
Erbium-Doped Waveguide Laser in Tantalum Pentoxide
Author :
Subramanian, Ananth Z. ; Oton, Claudio J. ; Shepherd, David P. ; Wilkinson, James S.
Author_Institution :
Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK
Volume :
22
Issue :
21
fYear :
2010
Firstpage :
1571
Lastpage :
1573
Abstract :
Tantalum pentoxide (Ta2O5) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta2O5 rib waveguides doped with 2.7 1020 erbium ions/cm3, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
Keywords :
erbium; integrated optics; optical pumping; optical waveguides; solid lasers; tantalum compounds; Si; Ta2O5:Er; dense photonic circuits; diode pump power threshold; diode-pumped laser action; erbium-doped waveguide laser; high index material; magnetron sputtering; oxidized silicon wafer; potential functionality; power 14 mW; rib waveguides; size 2.3 cm; tantalum pentoxide; wavelength 1558 nm to 1562 nm; Absorption; Cavity resonators; Erbium; Laser excitation; Optical waveguides; Pump lasers; Waveguide lasers; Erbium; integrated optics; laser amplifiers; optical materials; optical planar waveguide components;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2072495
Filename :
5560730
Link To Document :
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