Title :
Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits
Author :
Weatherford, T.R. ; Marshall, P.W. ; Marshall, C.J. ; Fouts, D.J. ; Mathes, B. ; LaMacchia, M.
Author_Institution :
Naval Postgraduate Sch., Monterey, CA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits
Keywords :
III-V semiconductors; field effect digital integrated circuits; gallium arsenide; ion beam effects; molecular beam epitaxial growth; semiconductor epitaxial layers; space vehicle electronics; GaAs; HIGFET circuits; IC radiation effects; MBE; SEE sensitivity; buffer layer; digital ICs; growth temperature; heavy-ion single event effects; heterostructure insulated gate FET; low-temperature buffer-layer thickness; space-based applications; Buffer layers; Circuits; Clocks; FETs; Gallium arsenide; Logic arrays; MESFETs; Power dissipation; Single event upset; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
