DocumentCode
1310164
Title
Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC
Author
Zhang, Y.G. ; Li, A.Z. ; Milnes, A.G.
Author_Institution
State Key Lab., Shanghai Inst. of Metall., China
Volume
9
Issue
3
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
363
Lastpage
364
Abstract
Metal-semiconductor-metal (MSM) UV photodetectors on n-type 6H-SiC epitaxial wafers have been reported for the first time, in which no p-n junctions or ohmic contacts are needed. Peak response wavelength at 340 nm and dark current of 1 pA at 20-V bias voltage have been measured. The photodetectors also show fair response to 193-nm wavelength deep UV light.
Keywords
dark conductivity; hydrogen; metal-semiconductor-metal structures; metallic thin films; optical films; semiconductor thin films; silicon compounds; ultraviolet detectors; 1 pA; 193 nm; 20 V; 6H-SiC; H-SiC; UV photodetectors; bias voltage; dark current; fair response; metal-semiconductor-metal ultraviolet photodetectors; n-type 6H-SiC epitaxial wafers; nm wavelength deep UV light; peak response wavelength; Current measurement; Dark current; Epitaxial layers; Ohmic contacts; Optical materials; P-n junctions; Photodetectors; Schottky barriers; Silicon carbide; Substrates;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.556074
Filename
556074
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