• DocumentCode
    1310183
  • Title

    Low energy proton induced SEE in memories

  • Author

    Duzellier, S. ; Ecoffet, R. ; Falguere, D. ; Nuns, T. ; Guibert, L. ; Hajdas, W. ; Calvert, M.C.

  • Author_Institution
    ONERA-CERT, Toulouse, France
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2306
  • Lastpage
    2310
  • Abstract
    This paper presents proton sensitivity curves obtained on memories from various generations. Highlight is set on component response at very low energy (down to 5 MeV) and implications on the calculated SEE rates are discussed
  • Keywords
    integrated circuit testing; integrated memory circuits; proton effects; 5 MeV; SEE rates; component response; low energy response; memory circuits; proton induced SEE; proton sensitivity curves; single event effects; Copper; Cyclotrons; Degradation; Electronic components; Electronic equipment testing; Ion accelerators; Ionization; Medical treatment; Plastic packaging; Proton accelerators;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.659050
  • Filename
    659050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1310183