Title :
Low energy proton induced SEE in memories
Author :
Duzellier, S. ; Ecoffet, R. ; Falguere, D. ; Nuns, T. ; Guibert, L. ; Hajdas, W. ; Calvert, M.C.
Author_Institution :
ONERA-CERT, Toulouse, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
This paper presents proton sensitivity curves obtained on memories from various generations. Highlight is set on component response at very low energy (down to 5 MeV) and implications on the calculated SEE rates are discussed
Keywords :
integrated circuit testing; integrated memory circuits; proton effects; 5 MeV; SEE rates; component response; low energy response; memory circuits; proton induced SEE; proton sensitivity curves; single event effects; Copper; Cyclotrons; Degradation; Electronic components; Electronic equipment testing; Ion accelerators; Ionization; Medical treatment; Plastic packaging; Proton accelerators;
Journal_Title :
Nuclear Science, IEEE Transactions on
