2.5 kV 2000-A monolithic reverse conducting gate turn-off thyristor

Author

Hashimoto, Osamu ; Takahashi, Y. ; Watanabe, Manabu ; Yamada, O.

Author_Institution

Fuji Electr. Corp., Res. & Dev. Ltd., Matsumoto City

Volume

26

Issue

5

fYear

1990

Firstpage

835

Lastpage

839

Abstract

A 2.5 kV 2000 A monolithic reverse-conducting gate turn-off thyristor (RC-GTO) has been developed using a precise lifetime control technique, a precise gate etching control technique, and an electrical separation technique between the GTO part and the diode part. It is most important for the RC-GTO to separate electrically the GTO part from the diode part. A very high separation resistance of 100-150 Ω is attained by applying a double diffused profile, and a high turn-off current of 2000 A is achieved by applying the precise lifetime control technique and the precise gate etching control technique. The development of the 2.5 kV 2000 A RC-GTO has been aided by the use of computer simulation and an image-converter camera

Keywords

CAD/CAM; carrier lifetime; digital simulation; electronic engineering computing; thyristors; 2.5 kV; 2000 A; GTO; carrier lifetime; computer simulation; double diffused profile; electrical separation; gate etching control; image-converter camera; lifetime control; monolithic reverse conducting gate turn-off thyristor; separation resistance; turn-off current; Anodes; Cathodes; Computer simulation; Electric resistance; Etching; Impedance; Industry Applications Society; Semiconductor diodes; Thyristors; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.60057

Filename

60057