DocumentCode
1310635
Title
Source access impedance model for AIGaN/ GaN HEMTs
Author
Xu, Yan ; Guo, Youguang ; Wu, Yaowu ; Xu, Ruimin ; Yan, Bin ; Lin, Weisi
Author_Institution
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
Volume
45
Issue
23
fYear
2009
fDate
11/1/2009 12:00:00 AM
Firstpage
1193
Lastpage
1194
Abstract
Thermal noise caused by source parasitic impedance (R s) is one of the most important noise mechanisms in AlGaN/GaN HEMTs. A physical based frequency dependent R s model is proposed. This model has been implemented in the PUCEL model for validation purpose, and the results show that the minimum noise figure (F min) of an AlGaN/GaN HEMT is not linear but nonlinear against frequency.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; thermal noise; AlGaN; GaN; HEMT; PUCEL model; source access impedance model; source parasitic impedance; thermal noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.1573
Filename
5325136
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