AIN on silicon based surface acoustic wave resonators operating at 5 GHz

Author

Neculoiu, Dan ; Muller, A. ; Deligeorgis, George ; Dinescu, Adrian ; Stavrinidis, A. ; Vasilache, Dan ; Cismaru, A.M. ; Stan, G.E. ; Konstantinidis, G.

Author_Institution

IMT-Bucharest, Bucharest, Romania

Volume

45

Issue

23

fYear

2009

fDate

11/1/2009 12:00:00 AM

Firstpage

1196

Lastpage

1197

Abstract

The fabrication and characterisation of surface acoustic wave resonators operating in the gigahertz frequency range are presented. The devices were fabricated on thin AlN layers deposited by magnetron sputtering on high resistivity (100) oriented silicon substrates. Using direct writing e-beam lithography, well defined interdigital transducers with 300 nm finger width and spacing have been obtained. On-wafer microwave measurements have demonstrated a narrow bandstop frequency characteristic with high rejection at approximately 5 GHz and an electromechanical coupling coefficient of 0.53 .

Keywords

aluminium compounds; electron beam lithography; interdigital transducers; microwave measurement; sputtering; substrates; surface acoustic wave resonators; AlN layer; device fabrication; direct writing e-beam lithography; electromechanical coupling coefficient; frequency 5 GHz; gigahertz frequency range; high resistivity oriented silicon substrate; interdigital transducer; magnetron sputtering; narrow bandstop frequency characteristics; on-wafer microwave measurement; size 300 nm; surface acoustic wave resonator;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.2520

Filename

5325138