DocumentCode
1310783
Title
Analysis of Power Switching Losses Accounting Probe Modeling
Author
Ammous, Kaiçar ; Morel, Hervé ; Ammous, Anis
Author_Institution
Dept. de Genie Electr., Ecole Nat. d´´Ing. de Sfax (ENIS), Sfax, Tunisia
Volume
59
Issue
12
fYear
2010
Firstpage
3218
Lastpage
3226
Abstract
This paper focuses on the errors affecting the estimation of power switching losses in power semiconductor devices based on integration of the voltage by current product. It is shown that the measured waveforms are not simply delayed by the probes, but some overshoots and distortions are due to the probes, which may not easily be corrected. These effects are the source of errors, particularly in fast transients. This paper shows analyses of simulation and measurements, including probe models.
Keywords
power measurement; power semiconductor devices; power semiconductor devices; power switching losses; Current measurement; Integrated circuit modeling; Loss measurement; MOSFET circuits; P-i-n diodes; Probes; Semiconductor device measurement; Transient analysis; Distortions; losses; measurement; power; probe modeling;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2010.2047302
Filename
5560819
Link To Document