• DocumentCode
    1310783
  • Title

    Analysis of Power Switching Losses Accounting Probe Modeling

  • Author

    Ammous, Kaiçar ; Morel, Hervé ; Ammous, Anis

  • Author_Institution
    Dept. de Genie Electr., Ecole Nat. d´´Ing. de Sfax (ENIS), Sfax, Tunisia
  • Volume
    59
  • Issue
    12
  • fYear
    2010
  • Firstpage
    3218
  • Lastpage
    3226
  • Abstract
    This paper focuses on the errors affecting the estimation of power switching losses in power semiconductor devices based on integration of the voltage by current product. It is shown that the measured waveforms are not simply delayed by the probes, but some overshoots and distortions are due to the probes, which may not easily be corrected. These effects are the source of errors, particularly in fast transients. This paper shows analyses of simulation and measurements, including probe models.
  • Keywords
    power measurement; power semiconductor devices; power semiconductor devices; power switching losses; Current measurement; Integrated circuit modeling; Loss measurement; MOSFET circuits; P-i-n diodes; Probes; Semiconductor device measurement; Transient analysis; Distortions; losses; measurement; power; probe modeling;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2010.2047302
  • Filename
    5560819