• DocumentCode
    1310829
  • Title

    Early development of polysilicon-gate MOS technology at Fairchild Semiconductor

  • Author

    Lojek, Bo

  • Author_Institution
    Atmel Corp.
  • Volume
    1
  • Issue
    4
  • fYear
    2009
  • Firstpage
    18
  • Lastpage
    25
  • Abstract
    This article describes Fairchild´s MOS polysilicon gate device, its technology, and the engineers behind the invention.
  • Keywords
    MIS devices; Fairchild semiconductor technology; polysilicon-gate MOS technology; Consumer electronics; Instruments; Integrated circuit technology; Large scale integration; MOS devices; MOSFETs; Microelectronics; Semiconductor device manufacture; Semiconductor materials; Wiring;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0582
  • Type

    jour

  • DOI
    10.1109/MSSC.2009.933432
  • Filename
    5325493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1310829