Title :
Early development of polysilicon-gate MOS technology at Fairchild Semiconductor
Author_Institution :
Atmel Corp.
Abstract :
This article describes Fairchild´s MOS polysilicon gate device, its technology, and the engineers behind the invention.
Keywords :
MIS devices; Fairchild semiconductor technology; polysilicon-gate MOS technology; Consumer electronics; Instruments; Integrated circuit technology; Large scale integration; MOS devices; MOSFETs; Microelectronics; Semiconductor device manufacture; Semiconductor materials; Wiring;
Journal_Title :
Solid-State Circuits Magazine, IEEE
DOI :
10.1109/MSSC.2009.933432
