Title :
Heavy ion induced failures in a power IGBT
Author :
Lorfevre, E. ; Dachs, Charles ; Detcheverry, Cèline ; Palau, Jean-Marie ; Gasiot, Jean ; Roubaud, Franck ; Calvet, Marie-Catherine ; Ecoffet, Robert
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device
Keywords :
failure analysis; insulated gate bipolar transistors; ion beam effects; 2D simulation; N-channel power IGBT; device triggering; heavy ion induced failure; latchup; Analytical models; Impedance; Insulated gate bipolar transistors; MOSFET circuits; Microscopy; Power MOSFET; Power supplies; Shape; Space technology; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
