• DocumentCode
    1310847
  • Title

    Heavy ion induced failures in a power IGBT

  • Author

    Lorfevre, E. ; Dachs, Charles ; Detcheverry, Cèline ; Palau, Jean-Marie ; Gasiot, Jean ; Roubaud, Franck ; Calvet, Marie-Catherine ; Ecoffet, Robert

  • Author_Institution
    Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2353
  • Lastpage
    2357
  • Abstract
    Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device
  • Keywords
    failure analysis; insulated gate bipolar transistors; ion beam effects; 2D simulation; N-channel power IGBT; device triggering; heavy ion induced failure; latchup; Analytical models; Impedance; Insulated gate bipolar transistors; MOSFET circuits; Microscopy; Power MOSFET; Power supplies; Shape; Space technology; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.659061
  • Filename
    659061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1310847