Title :
InGaAsP 400*200 mu m active crosspoint switch operating at 1.5 mu m using novel reflective Y-coupler components
Author :
White, J.H. ; Watts, J.J.S. ; Carroll, J.E. ; Armistead, C.J. ; Moole, D.J. ; Champelovier, J.A.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
5/1/1990 12:00:00 AM
Abstract :
The fabrication and operating characteristics of an active crosspoint switch with an overall dimension of 400*200 mu m is reported. The device can operate with no net loss, and unity facet to facet gain was demonstrated for both bar and cross state operation.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical couplers; optical switches; semiconductor switches; 1.5 micron; 200 micron; 400 micron; III-V semiconductors; InGaAsP; active crosspoint switch; bar state operation; channel absorption/gain; cross state operation; fabrication; matrix switch; operating characteristics; optical communication; reflective Y-coupler components; unity facet to facet gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900404
