• DocumentCode
    1311105
  • Title

    Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

  • Author

    Xin Sun ; Moroz, Victor ; Damrongplasit, Nattapol ; Changhwan Shin ; Tsu-Jae King Liu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3294
  • Lastpage
    3299
  • Abstract
    The impact of systematic and random variations on transistor performance is investigated for the trigate bulk MOSFET, the planar ground-plane bulk MOSFET, and SOI FinFET. The results indicate that the trigate bulk MOSFET design is least sensitive to process-induced variations and offers the best nominal performance, as compared with the planar ground-plane bulk MOSFET and SOI FinFET.
  • Keywords
    MOSFET; silicon-on-insulator; SOI FinFET; planar ground-plane bulk MOSFET; process-induced variations; trigate bulk MOSFET; variation study; FinFETs; Logic gates; MOSFET circuits; Resource description framework; Stress; Systematics; Fin-shaped FET; metal–oxide–semiconductor field-effect transistor (MOSFET); multigate FET; variability;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2161479
  • Filename
    6006523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311105