DocumentCode
1311107
Title
Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 
Pulse Excitation
Author
Kostakis, Ioannis ; Saeedkia, Daryoosh ; Missous, Mohamed
Author_Institution
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Volume
2
Issue
6
fYear
2012
Firstpage
617
Lastpage
622
Abstract
Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.
Keywords
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; photoconducting materials; semiconductor quantum wells; submillimetre wave antennas; terahertz wave detectors; InGaAs-InAlAs:Be; low temperature grown photoconductive antenna; material system; novel low temperature beryllium doped multiquantum-well structure; photoconductive antenna; pulse excitation; terahertz detection; terahertz generation; terahertz pulse; time-domain spectroscopy system; wavelength 800 nm; Antennas; Detectors; Indium compounds; Indium gallium arsenide; Laser excitation; Photoconductivity; Semiconductor materials; Spectroscopy; Low temperature (LT) InGaAs-InAlAs; THz emitters and detectors; pulse excitation; time-domain spectroscopy;
fLanguage
English
Journal_Title
Terahertz Science and Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-342X
Type
jour
DOI
10.1109/TTHZ.2012.2219047
Filename
6324408
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