• DocumentCode
    1311188
  • Title

    High-Efficiency MOSFET Inverter with H6-Type Configuration for Photovoltaic Nonisolated AC-Module Applications

  • Author

    Yu, Wensong ; Lai, Jih-Sheng ; Qian, Hao ; Hutchens, Chris

  • Author_Institution
    Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    26
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    1253
  • Lastpage
    1260
  • Abstract
    A novel, high-efficiency inverter using MOSFETs for all active switches is presented for photovoltaic, nonisolated, ac-module applications. The proposed H6-type configuration features high efficiency over a wide load range, low ground leakage current, no need for split capacitors, and low-output ac-current distortion. The detailed power stage operating principles, pulsewidth modulation scheme, associated multilevel bootstrap power supply, and integrated gate drivers for the proposed inverter are described. Experimental results of a 300 W hardware prototype show that not only are MOSFET body diode reverse-recovery and ground leakage current issues alleviated in the proposed inverter, but also that 98.3% maximum efficiency and 98.1% European Union efficiency of the dc-ac power train and the associated driver circuit are achieved.
  • Keywords
    PWM invertors; bootstrap circuits; driver circuits; leakage currents; photovoltaic power systems; power MOSFET; power semiconductor switches; H6-type configuration; MOSFET inverter; active switches; integrated gate drivers; multilevel bootstrap power supply; photovoltaic nonisolated AC-module; power 300 W; power stage operating principles; pulsewidth modulation scheme; Capacitors; Inverters; Leakage current; MOSFET circuits; Photovoltaic systems; Pulse width modulation; AC module; MOSFET inverter; high efficiency; nonisolated; photovoltaic (PV) systems; transformerless;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2010.2071402
  • Filename
    5560870